dcr2880b65 phase control thyristor preliminary information ds5786 - 3 j uly 2011 (l n 2 8553 ) 1 / 10 www.dynexsemi.com features ? double side cooling ? high surge capability applications ? high power drives ? high voltage power supplies ? static switches voltage ratings part and ordering number repetitive peak voltages v drm and v rrm v conditions dcr2880b65* dcr2880b60 dcr2880b55 DCR2880B50 6500 6000 5500 5000 t vj = - 40c to 125c, i drm = i rrm = 300ma, v drm , v rrm t p = 10ms, v dsm & v rsm = v drm & v rrm + 100v respectively lower voltage grades available. *6200v @ - 40 o c, 6500v@ 0 o c ordering information when ordering, select the required part number shown in the voltage ratings selection table. for example: dcr2880b65 note: please use the complete part number when ordering and quote this number in any future correspondence relating to your order. key parameters v drm 6500v i t(av) 2845a i tsm 38500a dv/dt* 1500v/s di/dt 300a/s * higher dv/dt selections available outline type code: b (see package details for further information) fig. 1 package outline
semiconductor dcr2880b65 2 /10 www.dynexsemi.com current ratings t case = 60c unless stated otherwise symbol parameter test conditions max. units double side cooled i t(av) mean on - state current half wave resistive load 2845 a i t(rms) rms value - 4469 a i t continuous (direct) on - state current - 4130 a surge ratings symbol parameter test conditions max. units i tsm surge (non - repetitive) on - state current 10ms half sine, t case = 125c 38.85 ka i 2 t i 2 t for fusing v r = 0 7.55 ma 2 s thermal and mechanical ratings symbol parameter test conditions min. max. units r th(j - c) thermal resistance C junction to case double side cooled dc - 0.007 c/w single side cooled anode dc - 0.0116 c/w cathode dc - 0.0181 c/w r th(c - h) thermal resistance C case to heatsink clamping force 76.0kn double side - 0.0014 c/w (with mounting compound) single side - 0.0028 c/w t vj virtual junction temperature blocking v drm / v rrm - 125 c t stg storage temperature range - 55 125 c f m clamping force 68.0 84.0 kn
semiconductor dcr2880b65 3 /10 www.dynexsemi.com dynamic characteristics symbol parameter test conditions min. max. units i rrm /i drm peak reverse and off - state current at v rrm /v drm , t case = 125c - 300 ma dv/dt max. linear rate of rise of off - state voltage to 67% v drm , t j = 125c, gate open - 1500 v/s di/dt rate of rise of on - state current from 67% v drm to 2x i t(av) repetitive 50hz - 150 a/s gate source 30v, 10 ? , non - repetitive - 300 a/s t r < 0.5s, t j = 125c v t(to) threshold voltage C low level 500 to 2400a at t case = 125c - 0.94 v threshold voltage C high level 2400 to 72 00a at t case = 125c - 1.13 v r t on - state slope resistance C low level 500a to 2400a at t case = 125c - 0.343 m ? on - state slope resistance C high level 2400a to 72 00a at t case = 125c - 0.264 m ? t gd delay time v d = 67% v drm , gate source 30v, 10 ? - 3 s t r = 0.5s, t j = 25c t q turn - off time t j = 125c, v r = 200v, di/dt = 1a/s, - 1200 s dv dr /dt = 20v/s linear q s stored charge i t = 2000a, t j = 125c, di/dt C 1a/s, 2800 6400 c i l latching current t j = 25c, v d = 5v - 3 a i h holding current t j = 25c, r g - k = ? , i tm = 500a, i t = 5a - 300 ma
semiconductor dcr2880b65 4 /10 www.dynexsemi.com gate trigger characteristics and ratings symbol parameter test conditions max. units v gt gate trigger voltage v drm = 5v, t case = 25c 1.5 v v gd gate non - trigger voltage at 50% v drm, t case = 125c 0.4 v i gt gate trigger current v drm = 5v, t case = 25c 250 ma i gd gate non - trigger current at 50% v drm, t case = 125c 10 ma curves fig.2 maximum & minimum on - state characteristics v tm equation where a = 0.914146 b = - 0. 0 3808 v tm = a + bln (i t ) + c.i t +d. ? i t c = 0.00016 d = 0.015311 these values are valid for t j = 125c for i t 500a to 7200a 0 1000 2000 3000 4000 5000 6000 7000 0.5 1.5 2.5 3.5 instantaneous on - state current i t - (a) instantaneous on - state voltage v t - (v) min 125 c max 125 c min 25 c max 25 c
semiconductor dcr2880b65 5 /10 www.dynexsemi.com fig.3 on - state power dissipation C sine wave fig.4 maximum permissible case temperature, double side cooled C sine wave fig.5 maximum permissible heatsink temperature, double side cooled C sine wave fig.6 on - state power dissipation C rectangular wave 0 2 4 6 8 10 12 14 16 18 20 0 1000 2000 3000 4000 5000 mean power dissipation - (kw) mean on - state current, i t(av) - (a) 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 1000 2000 3000 4000 5000 maximum case temperature, t case ( o c ) mean on - state current, i t(av) - (a) 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 1000 2000 3000 4000 maximum heatsink temperature, t heatsink - ( o c ) mean on - state current, i t(av) - (a) 180 120 90 60 30 0 2 4 6 8 10 12 14 16 18 20 0 1000 2000 3000 4000 5000 6000 7000 mean power dissipation - (kw) mean on - state current, i t(av) - (a) d.c. 180 120 90 60 30
semiconductor dcr2880b65 6 /10 www.dynexsemi.com fig.7 maximum permissible case temperature, double side cooled C rectangular wave fig.8 maximum permissible heatsink temperature, double side cooled C rectangular wave fig.9 maximum (limit) transient thermal impedance C junction to case (c/kw) 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 1000 2000 3000 4000 5000 6000 maximum permissible case temperature , t case - ( c) mean on - state current, i t(av) - (a) d.c. 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 1000 2000 3000 4000 5000 6000 maximum heatsik temperature t heatsink - ( o c) mean on - state current, i t(av ) - (a) d.c. 180 120 90 60 30 0 2 4 6 8 10 12 14 16 18 20 0.001 0.01 0.1 1 10 100 thermal impedance, zt h(j - c) ( c/kw) time ( s ) double side cooling anode side cooling cathode sided cooling 1 2 3 4 double side cooled r i (c/kw) 0.502 1.333 2.9559 2.2335 t i (s) 0.0137081 0.0548877 0.3311925 1.6905 anode side cooled r i (c/kw) 1.3035 3.138 1.1859 5.9136 t i (s) 0.0251065 0.2410256 1.0806 11.002 cathode side cooled r i (c/kw) 1.2616 2.6216 13.3603 0.8304 t i (s) 0.0245837 0.2005035 5.7854 16.765 z th = ? [r i x ( 1-exp. (t/t i ))] [1] ? r th(j-c) conduction tables show the increments of thermal resistance r th(j-c) when the device operates at conduction angles other than d.c. double side cooling anode side cooling cathode sided cooling ? z th (z) ? z th (z) ? z th (z) ? sine. rect. ? sine. rect. ? sine. rect. 180 0.70 0.48 180 0.67 0.47 180 0.67 0.47 120 0.80 0.68 120 0.77 0.66 120 0.77 0.66 90 0.90 0.78 90 0.87 0.75 90 0.87 0.76 60 1.00 0.89 60 0.95 0.86 60 0.95 0.86 30 1.07 1.01 30 1.02 0.96 30 1.02 0.96 15 1.10 1.07 15 1.05 1.02 15 1.05 1.02
semiconductor dcr2880b65 7 /10 www.dynexsemi.com fig.10 multi - cycle surge current fig.11 single - cycle surge current fig.10 reverse recovery charge fig.11 reverse recovery current 0 5,000 10,000 15,000 20,000 25,000 30,000 35,000 40,000 0 5 10 15 20 25 30 rate of decay of on-state current, di/dt - (a/us) stored charge, qs - (uc) q s min = 3539.7*(di/dt) 0.5991 q s max = 7066.1*(di/dt) 0.4891 conditions: t j = 125 o c v rpeak ~ 3900v, v rm ~ 2600v snubber as apprpriate to control reverse volts 0 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30 rate of decay of on-state current, di/dt - (a/us) reverse recovery current, i rr - (a) i rr min = 41.906*(di/dt) 0.8147 i rr max = 59.812*(di/dt) 0.7589 conditions: t j = 125 o c v rpeak ~ 3900v, v rm ~ 2600v snubber as apprpriate to control reverse volts
semiconductor dcr2880b65 8 /10 www.dynexsemi.com fig12 gate characteristics fig. 13 gate characteristics 0 1 2 3 4 5 6 7 8 9 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 gate trigger voltage, v gt - (v) gate trigger current i gt , - (a) tj = 125 o c tj = 25 o c tj = - 40 o c preferred gate drive area upper limit lower limit 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 9 10 gate trigger voltage, v gt - (v) gate trigger current, i gt - (a) lower limit upper limit 5w 10w 20w 50w 100w 150w - 40c 50 100 400 100 150 150 150 200 150 150 125 500 150 150 100 1000 150 100 25 10000 20 - - pulse width us frequency hz pulse power p gm (watts)
semiconductor dcr2880b65 9 /10 www.dynexsemi.com package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. clamping force: 76kn 10% lead length: 420mm lead terminal connector: m4 ring package outline type code: b fig.14 package outline cathode 20 offset (nom.) to gate tube 3rd angle projection if in doubt ask do not scale for package height see table ?120.0 max. ?84.6 nom. ?84.6 nom. anode gate ?1.5 deep (in both hole ?3.60 x 2.00 electrodes) device maximum thickness (mm) minimum thickness (mm) dcr5050b22 34.565 34.115 dcr4590b28 34.64 34.19 dcr3790b42 34.87 34.42 dcr3480b52 34.99 34.54 dcr2880b65 35.25 34.8 dcr2400b85 35.61 35.16
semiconductor dcr2880b65 10 /10 www.dynexsemi.com stresses above those listed in this data sheet may cause permanent damage to the device. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. appropriate safety precautions should always be followed. headquarters operations dynex semiconductor limited doddington road, lincoln, lincolnshire, ln6 3lf united kingdom. phone: +44 (0) 1522 500500 fax: +44 (0) 1522 500550 web: http://www.dynexsemi.com customer service phone: +(0) 1522 502753 / 502901 fax: +(0) 1522 500020 e - mail: power_solutions@dynexsemi.com ? dynex semiconductor 2003 technical documentation C not for resale. produced in united kingdom this publication is issued to provide information only which (unless agreed by the company in writing) may not be used, appli ed or reproduced for any purpose n or form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. no warranty or guarantee exp ress or implied is made regarding the capability, performance or suitability of any product or service . the company reserves the right to alter without prior notice the specification, design or price of any product or service. information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such method s of use will be satisfactory in a specific piece of equipment. it is the users responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and ha s not been superseded. these products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. all products and materials are sold and services provided subject to the companys cond itions of sale, which are available on request. all brand names and product names used in this publication are trademarks, registered trademarks or trade names of their resp ective owners.
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